Reflection type display device and electronic device

ABSTRACT

Among insulating layers for insulating and separating first wiring lines, second wiring lines, and pixel electrodes constituting a reflection type display device, at least one layer is made of an insulating film in which a carbon-based material or a pigment is dispersed. By this structure, a conventional step of forming a black mask can be greatly simplified.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a reflection type display deviceconstituted by semiconductor devices using thin film semiconductors, andparticularly to a structure of a reflection type liquid crystal displaydevice. Also, the present invention relates to an electronic deviceusing the reflection type display device.

2. Description of the Related Art

In recent years, since a portable information terminal equipment(portable equipment) such as a mobile computer and a portable telephone(including PHS) has rapidly come into wide use, a reflection type liquidcrystal display device attracts a great deal of attention. Since thereflection type liquid crystal display device does not require backlightas a light source, it is possible to make the portable equipmentminiaturized, lightened, and decreased in consumption of electric power.

Here, a conventional process of manufacturing a pixel matrix circuitconstituting a reflection type liquid crystal display device will bedescribed in brief. The pixel matrix circuit is a circuit in which thinfilm transistors (TFT) for controlling an electric field applied to aliquid crystal are arranged in matrix, and constitutes an image displayregion of a liquid crystal display device.

In FIG. 2(A), 201 denotes a substrate having an insulating surface, 202denotes an active layer of a first pixel TFT, and 203 denotes an activelayer of a second pixel TFT. A distance between the first pixel TFT andthe second pixel TFT corresponds to a pixel pitch, and has a tendency tobecome short as the display becomes highly minute.

Reference numeral 204 denotes a gate insulating film. Gate electrodes205 and 206 are formed thereon. The gate electrodes 205 and 206 areconnected to not-shown gate lines. In this way, the state shown in FIG.2(A) is obtained.

Next, an impurity ion for giving one conductivity (phosphorus (P) for anN-type, and boron (B) for a p-type) is added into the active layers 202and 203. As a result, source regions 207 and 208, drain regions 209 and210, and channel formation regions 211 and 212 are formed (FIG. 2(B)).

Next, a first interlayer insulating film 213 is formed, contact holesare made, and source electrodes 214 and 215 and drain electrodes 216 and217 are formed. In this way, the state shown in FIG. 2(C) is obtained.

Further, a second interlayer insulating film 218 is formed, and a blackmask 219 is formed thereon. A third interlayer insulating film 220 isformed thereon, and finally pixel electrodes 221 are formed. Therespective pixel electrodes 221 are made of a metal thin film whichreflects incident light, so that the pixel electrodes are made to have afunction as a reflecting electrode (FIG. 2(D)).

At this time, the black mask 219 is disposed under a region which is agap between the pixel electrodes (reflecting electrodes) 221. In FIG.2(D), although the black mask appears to be individual patterns, all thepatterns are actually connected in matrix. The black mask 219 arrangedin this manner serves to block light leaked from the gap of the pixelelectrodes 221.

Through the above steps, the pixel matrix circuit as shown in FIG. 2(D)is completed. Then, by a well-known cell assembling step, a liquidcrystal is held between the substrate on which the pixel matrix circuitis formed and an opposite substrate, so that a reflection type liquidcrystal display device is completed.

As an example different from the structure shown in FIG. 2(D), it isalso possible to use the source electrodes 214 and 215 as black masks byadjusting the source electrodes 214 and 215 to the gaps between thepixel electrodes 221. However, the line width of the source/drainelectrodes has a tendency to be made minute, and further, in view of thepatterning precision (affecting the distance of the gap) of the pixelelectrode, it may be said that there is a limit to this proposal.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a technique capable ofgreatly simplifying manufacturing steps of a reflection type liquidcrystal display device.

According to an aspect of the present invention, a reflection typedisplay device comprises an active matrix substrate on which a pluralityof TFTs are formed, an opposite substrate including an oppositeelectrode, and a liquid crystal layer held between the active matrixsubstrate and the opposite substrate, and is characterized in that firstwiring lines, second wiring lines, and pixel electrodes constituting theplurality of TFTs are insulated and separated from each other byinsulating layers, and at least one of the insulating layers is made ofan insulating film in which a carbon-based material or a pigment isdispersed.

According to another aspect of the present invention, a reflection typedisplay device comprises an active matrix substrate on which a pluralityof TFTs are formed, an opposite substrate including an oppositeelectrode, and a liquid crystal layer held between the active matrixsubstrate and the opposite substrate, and is characterized in that firstwiring lines, second wiring lines, and pixel electrodes constituting theplurality of TFTs are insulated and separated from each other byinsulating layers, and at least one of the insulating layers is made ofan organic resin film in which a carbon-based material or a pigment isdispersed.

In the above structure, the organic resin film may be made of one kindor plural kinds of materials selected from the group consisting ofpolyimide, polyamide, polyimide amide, and acryl.

According to still another aspect of the present invention, anelectronic device comprises an active matrix substrate on which aplurality of TFTs are formed, an opposite substrate including anopposite electrode, and a liquid crystal layer held between the activematrix substrate and the opposite substrate, and is characterized inthat first wiring lines, second wiring lines, and pixel electrodesconstituting the plurality of TFTs are insulated and separated from eachother by insulating layers, and at least one of the insulating layers ismade of an insulating film in which a carbon-based material or a pigmentis dispersed.

According to still another aspect of the present invention, anelectronic device comprises an active matrix substrate on which aplurality of TFTs are formed, an opposite substrate including anopposite electrode, and a liquid crystal layer held between the activematrix substrate and the opposite substrate, and is characterized inthat first wiring lines, second wiring lines, and pixel electrodesconstituting the plurality of TFTs are insulated and separated from eachother by insulating layers, and at least one of the insulating layers ismade of an organic resin film in which a carbon-based material or apigment is dispersed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(A) to 1(E) are views showing manufacturing steps of a pixelmatrix circuit.

FIGS. 2(A) to 2(D) are views showing manufacturing steps of a pixelmatrix circuit.

FIGS. 3(A) to 3(D) are views showing manufacturing steps of a reflectiontype liquid crystal display device.

FIGS. 4(A) to 4(C) are views showing manufacturing steps of a reflectiontype liquid crystal display device.

FIG. 5 is a sectional view showing a section of a reflection type liquidcrystal display device.

FIGS. 6(A) to 6(E) are views for explaining examples of appliedproducts.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the present invention, when a plurality of TFTs as switching elementsof a reflection type display device are formed, an insulating film(especially an organic resin film) in which a carbon-based material or apigment is dispersed, is used as an interlayer insulating film(insulating layer).

For example, as shown in FIG. 1(E), when the present invention is usedfor an insulating layer to insulate and separate source/drain wiringlines 120 to 123 and pixel electrodes 125 and 126, an insulating layer124 having a light shading property can be formed.

When the present invention is used, since it is not necessary toseparately provide a black mask, manufacturing steps are greatlysimplified, whereby it is possible to realize the reduction of amanufacturing cost, improvement of a manufacturing yield, andimprovement of a throughput.

Embodiment 1

In this embodiment, an example in which a pixel matrix circuit (only afirst pixel TFT and a second pixel TFT are depicted) of a reflectiontype liquid crystal display device is formed, will be described withreference to FIGS. 1(A) to 1(E).

As a substrate having an insulating surface, a glass substrate 101having an under film (not shown) on its surface is used. A quartzsubstrate, a ceramic substrate, a silicon substrate or the like may beused other than the glass substrate.

Next, active layers 102 and 103 made of a crystalline silicon film areformed. The active layer 102 subsequently constitutes the first pixelTFT, and the active layer 103 constitutes the second pixel TFT.

The crystalline silicon film may be formed directly by a low pressurethermal CVD method, or an amorphous silicon film may be crystallized. Inthis embodiment, an amorphous silicon film with a thickness of 10 to 75nm (typically 15 to 45 nm) is crystallized by a technique disclosed inJapanese Patent Unexamined Publication No. Hei. 7-130652. The activelayers 102 and 103 are formed by patterning the crystalline silicon filmobtained by the technique of the publication into islands.

After the active layers 102 and 103 are formed, a silicon oxide filmwith a thickness of 120 nm is formed as a gate insulating film 104. Asilicon nitride oxide film designated by SiO_(x) N_(y), a siliconnitride film or a lamination film thereof may be used as the gateinsulating film 104.

Next, an electrode pattern (not shown) made of a material mainlycontaining aluminum is formed on the gate insulating film 104. Theelectrode pattern subsequently becomes gate electrodes and gate wiringlines (these wiring lines will be referred to as first wiring lines).

Then, by two anodic oxidation steps, porous anodic oxidation films 105and 106 and dense anodic oxidation films 107 and 108 are formed. Theconditions of this anodic oxidation steps may be referred to JapanesePatent Unexamined Publication No. Hei. 7-135318. Regions of theelectrode pattern not subjected to the anodic oxidation are defined asgate electrodes 109 and 110 (FIG. 1(A)).

A material which can be subjected to the anodic oxidation, such a stantalum, molybdenum or tungsten may be used other than the materialmainly containing aluminum. Also, a crystalline silicon film in whichone conductivity is given, may be used.

After the state shown in FIG. 1(A) is obtained, an impurity ion forgiving one conductivity is added. In this embodiment, a P ion (or Asion) is added to make the pixel TFT an N-channel type. An accelerationvoltage is made 80 keV and a dosage is made 1×10¹⁵ atoms/cm².

At the step of adding the impurity ion, source regions 111 and 112 anddrain regions 113 and 114 are formed in a self-aligned manner with thegate electrodes 109 and 110 and the porous anodic oxidation films 105and 106 as masks (FIG. 1(B)).

Next, after the porous anodic oxidation films 105 and 106 are removed, aP ion (or As ion) is again added. In this ion adding step, anacceleration voltage is made 80 keV, and a dosage is made 1×10¹⁴atoms/cm² which is lower than that in the previous adding step.

As a result, the conductivity of the source regions 111 and 112 and thedrain regions 113 and 114 is further increased, and regions 115 and 116shaded by the previous porous anodic oxidation films 105 and 106 areadded with a P ion with a concentration lower than the source/drainregions. These regions 115 and 116 are called lightly doped regions, andespecially the region positioned at the side of the drain region is alsocalled an LDD region. Further, at the same time, channel formationregions 117 and 118 in which an impurity ion is not added, are defined(FIG. 1(C)).

After the state shown in FIG. 1(C) is obtained, a heat treatment such asfurnace annealing, laser annealing, or lamp annealing is carried out sothat the impurity ion, which was added into the active layer, isactivated. At this time, it is possible to restore the damage generatedin the active layer by adding the impurity ion.

In the manner described above, after the basic portion of a TFT iscompleted, a first insulating layer 119 is formed, and source wiringlines 120 and 121 and drain wiring line 122 and 123 are formed throughcontact holes (these wiring lines are called second wiring lines).

In this way, the state shown in FIG. 1(D) is obtained. After the stateshown in FIG. 1(D) is obtained, a second insulating layer 124 is formedso as to cover the first pixel TFT and the second pixel TFT. In thepresent invention, as the second insulating film 124, an insulating filmin which a carbon-based material (including graphite) or a pigment isdispersed, is used. The carbon-based material or the pigment issufficient if a light shading property can be given to the insultingfilm. Thus, it may be said that a black pigment is preferable for thepigment.

A silicon oxide film or an organic resin film may be used as theinsulating film. However, in this embodiments, polyimide, polyamide,polyimide amide, acryl or the like may be used as the organic resinfilm.

The organic resin film has the following advantages. That is, (1) a filmcan be easily formed by a spin coating method, (2) a thick insulatingfilm can be formed at a high throughput, and (3) an excellent flatsurface can be obtained. Especially, acryl has such features that it ismost inexpensive, is superior in flatness, and can be patterned bydirect exposure because of its photosensitivity.

The second insulating layer 124 may have a lamination structure ofmaterials selected from the group consisting of silicon oxide, siliconnitride, silicon nitride oxide, and organic resin. Even in the case ofan insulating layer made of such a lamination structure, the presentinvention is effective if at least one layer of the lamination structureis a light shading film in which a carbon-based material or a pigment isdispersed.

After the second insulating layer 124 is formed in this way, contactholes are formed, and pixel electrodes 125 and 126 are formed. The pixelelectrodes 125 and 126 are respectively connected to the drainelectrodes 122 and 123, and are electrically connected to the firstpixel TFT and the second pixel TFT, respectively (FIG. 1(E)).

The pixel electrodes 125 and 126 are made of a material having a highreflectance. In this embodiment, a material mainly containing aluminumis used. In the surface state of the pixel electrodes 125 and 126, it iseffective to contrive such means that the surface state for a directview type display device is made a state where roughness is provided,and the surface state for a projection type display device is made amirror state.

Finally, a heat treatment is carried out in an atmosphere containinghydrogen, so that dangling bonds in the active layer are terminated byhydrogen. The characteristics of the TFT is greatly improved by thehydrogenating treatment. In the way described above, the pixel matrixcircuit of a reflection type liquid crystal display device is completed.

As shown in FIG. 1(E), in the structure of the present invention, theentire of the insulating layer 124 under the pixel electrodes 125 and126 function as a black mask (light shading film), so that lightinvading through the gaps between the pixel electrodes does not reachthe active layers. That is, it is possible to completely protect theactive layers from incident light without being influenced by a TFTstructure or a TFT size.

As described above, according to the present invention, it is possibleto assure the complete light shading property even if a conventionalstep of forming a black mask, a step of patterning the black mask, and astep of forming an insulating layer to insulate and separate the blackmask from the pixel electrode, are omitted.

Accordingly, it is possible to simplify the manufacturing steps of thereflection type display device, and to greatly improve the throughputand yield. Also, it is possible to greatly reduce the manufacturingcost.

Embodiment 2

In this embodiment, an example of a process of manufacturing an activematrix reflection type liquid crystal display device in which a pixelmatrix circuit and a driver circuit are integrated on the samesubstrate, will be described with reference to FIGS. 3(A) to 3(D).However, it should be noted that the present invention is not limited tothis embodiment.

In FIG. 3(A), 301 denotes a glass substrate, 302 denotes an under film(silicon oxide film), 303 to 305 denote active layers, and 306 denotes agate insulating film formed by a CVD method. The active layers 303 to305 may be formed in accordance with the steps shown in theembodiment 1. Incidentally, 303 denotes an active layer of an N-channelTFT constituting a CMOS circuit, 304 denotes an active layer of aP-channel TFT constituting the CMOS circuit, and 305 denotes an activelayer of a pixel TFT.

Next, a not-shown metal film mainly containing aluminum is formed, andan origin of a later gate electrode is formed by patterning. Here, atechnique disclosed in Japanese Patent Unexamined Publication No. Hei.7-135318 is employed. By using the technique disclosed in thepublication, porous anodic oxidation films 307 to 309, dense anodicoxidation films 310 to 312, and gate electrodes 313 to 315 are formed.

Next, the gate insulting film 306 is etched by a dry etching methodusing the gate electrodes 313 to 315 and the porous anodic oxidationfilms 307 to 309 as masks, so that gate insulating films 316 to 318 areformed. Then the porous anodic oxidation films 307 to 309 are removed.In this way, there is obtained a state in which the ends of the gateinsulating films 316 to 318 are exposed (FIG. 3(B)).

Next, an impurity ion for giving an N-type is added in two steps. Inthis embodiment, the first addition of the impurity ion is carried outat a high acceleration voltage to form an n⁻ region. At this time, sincethe acceleration voltage is high, the impurity ion is added not onlyinto the exposed surface of the active layer, but also into the portionsunder the ends of the exposed gate insulating films. Further, the secondaddition of the impurity ion is carried out at a low accelerationvoltage to form an n⁺ region. At this time, since the accelerationvoltage is low, the gate insulating films function as masks.

Through the above steps, there are formed a source region 319, a drainregion 320, a lightly doped region 321, and a channel formation region322 of the N-channel TFT constituting the CMOS circuit. Also, there areformed a source region 323, a drain region 324, a lightly doped region325, and a channel formation region 326 of the N-channel TFTconstituting the pixel TFT (FIG. 3(C)).

In the state shown in FIG. 3(C), a P-channel TFT constituting the CMOScircuit has the same structure as the N-channel TFT.

Next, a resist mask is provided to cover the N-channel TFT, and animpurity ion for giving a P-type is added. This step is also dividedinto two parts which are carried out similarly to the above-mentionedimpurity adding step, so that a source region 328, a drain region 329, alightly doped region 330 and a channel formation region 331 of theP-channel TFT constituting the CMOS circuit, are formed (FIG. 3(D)).

After the active layer is completed in the manner described above,similarly to the embodiment 1, activation of the impurity ion andrecovery of damage generated at the ion addition are made. Then,similarly to the embodiment 1, a first insulating layer 332, sourcewiring lines 333 to 335, drain wiring lines 336 and 337 are formed toobtain the state shown in FIG. 4(A).

Next, a second insulating layer 340 made of a lamination structure of asilicon oxide film 338 and a polyimide film 339 in which a black pigmentis dispersed, is formed. Also in this embodiment, the second insulatinglayer 340 functions as a black mask, too.

After the second insulating layer 340 is formed, a contact hole isformed and a pixel electrode 341 made of a material mainly containingaluminum is formed. Further, the entire is hydrogenated so that theactive matrix substrate shown in FIG. 4(B) is completed. In FIG. 4(B), adriver circuit is shown in the left side and a pixel matrix circuit isshown at the right side.

Next, an orientation film 342 is formed on the uppermost layer (on thepixel electrode 341) of the active matrix substrate. Further, there isprovided an opposite substrate 345 in which an opposite electrode 343and an orientation film 344 are formed. A color filter may be providedon the opposite substrate according to necessity.

A sealing material is printed on the opposite substrate, spacers aresprinkled to the active matrix substrate, and both the substrates arebonded to each other. Further, a liquid crystal material is injectedbetween both the substrates and is sealed by the sealing material. Inthis way, a liquid crystal layer 346 is held between the oppositesubstrate and the active matrix substrate.

In the way described above, the active matrix reflection type liquidcrystal display device as shown in FIG. 4(C) is completed. At the timeof operation, as shown in FIG. 4(C), incident light 401 is reflected bythe pixel electrode 341 so that an image is displayed. Reference numeral402 denotes reflected light.

In the case where the driver circuit and the pixel matrix circuit areformed on the same substrate as in this embodiment, a material to blockan optical path, like the pixel electrode 341, does not exist above thedriver circuit. Even in such a case, since the second insulating layer340 functions as the black mask, it is possible to protect the activelayers from light.

Thus, it is possible to easily apply the present invention even to, forexample, a system-on-panel structure in which a logic circuit such as aclock control circuit, a CPU, and a memory is mounted in addition to thedriver circuit.

Embodiment 3

In the embodiment 1 and the embodiment 2, a planar type TFT has beendescribed as an example. The present invention is not naturallyinfluenced by a TFT structure. Thus, there is no problem even ifindividual TFTs constituting the circuit is a reverse stagger type TFTor a multigate type TFT.

Embodiment 4

In the embodiment 2, there has been described an example in whichpolyimide is used as a base material of the second insulating layer, andthe black pigment is used as a dispersoid (dispersed substance).However, in the present invention, a solution coated insulating film(for example, PSG, BSG and the like) may be used as a base material.

In that case, there is obtained an advantage that an insulating layerhaving heat resistance higher than the case where the organic resin filmis used as the base material, can be formed.

Embodiment 5

In the embodiment 1 and the embodiment 2, the glass substrate in whichthe under film (not shown) is formed on the surface, is used as thesubstrate having an insulating surface. When the solution coatedinsulating film shown in the embodiment 4 is used as the under film, itis possible to make the under film itself function as the black mask.

FIG. 5 is a sectional view showing a reflection type liquid crystaldisplay device used in this embodiment. Reference numeral 501 denotes anunder layer formed by dispersing graphite into a solution coatedinsulating film of PSG or the like, 502 denotes an insulating layerformed by dispersing graphite into an organic resin film of course,carbon or black pigments may be used instead of graphite.

When the structure as shown in FIG. 5 is formed, since all the incidentlight from the rear side of the active matrix substrate can be blocked,the effect of the present invention can be further improved.

Embodiment 6

In this embodiment, electronic device to which the reflection typedisplay device of the present invention can he applied, will bedescribed with reference to FIGS. 6(A) to 6(E). The electronic devicesusing the present invention include a (digital) video camera, a(digital) still camera, a projector, a head mount display, a carnavigation system, a personal computer, a portable information terminal(mobile computer, portable telephone, etc.) and the like.

FIG. 6(A) shows a mobile computer, which is constituted by a main body2001, a camera portion 2002, an image receiving portion 2003, anoperation switch 2004, and a display device 2005. The present inventioncan be applied to the display device 2005. Incidentally, some types ofmobile computers include a built-in PHS (Personal Handyphone System)circuit.

FIG. 6(B) shows a head mount display, which is constituted by a mainbody 2101, a display device 2102, and a band portion 2103. When thepresent invention is applied to the display device 2102, the cost of thedevice can be greatly reduced.

FIG. 6(C) shows a front type projector, which is constituted by a mainbody 2201, a light source 2202, a display device 2203, an optical system2204, and a screen 2205. The present invention can be applied to thedisplay device 2203. Although the drawing shows a type in which an imageis projected to a screen, a rear type projector in which an image isprojected from the rear side to a TV screen, may be made.

FIG. 6(D) shows a portable telephone, which is constituted by a mainbody 2301, an audio output portion 2302, an audio input portion 2303, adisplay device 2304, an operation switch 2305, and an antenna 2306. Whenthe present invention is applied to the display device 2304, a monitorsuperior in visibility can be mounted.

FIG. 6(E) shows a video camera, which is constituted by a main body2401, a display device 2402, an audio input portion 2403, an operationswitch 2404, a battery 2405, and an image receiving portion 2406. Thepresent invention can be applied to the display device 2402.

As described above, the application range of the present invention isextremely wide, and the present invention can be applied to displaymediums of any fields. Especially, a reflection type display devicewhich does not require backlight, is most suitable for a portableinformation terminal equipment such as a mobile computer, a portabletelephone, and a video camera. Of course, the present invention can beapplied to a case in which backlight is used, such as a projector,without any problem.

By using the present invention, it is possible to use an insulatinglayer itself, which insulates and separates various wiring lines orelectrodes, as a black mask. Thus, it becomes unnecessary to provide ablack mask separately, so that manufacturing steps can be greatlysimplified.

Accordingly, when a reflection type display device is manufactured, itis possible to realize the improvement of a throughput, improvement of ayield, and reduction of a manufacturing cost. Also, it is possible toreduce the cost of an electronic device provided with such a reflectiontype display device.

What is claimed is:
 1. A reflection type display device comprising:anactive matrix substrate; a TFT provided over a display part of saidactive matrix substrate; a pixel electrode provided over said activematrix substrate; an opposite substrate including an opposite electrode;an electro-optical modulating layer held between the active matrixsubstrate and the opposite substrate; and a black mask comprising aresin provided between said TFT and said electro-optical modulatinglayer, wherein said black mask covers at least an entire surface of saiddisplay part of said active matrix substrate while including a contacthole in said black mask to connect said pixel electrode with said TFTthrough said contact hole.
 2. The device of claim 1 wherein saidelectro-optical modulating layer comprises a liquid crystal.
 3. Thedevice of claim 1 wherein said pixel electrode is provided on and incontact with said black mask.
 4. The device of claim 1 furthercomprising an insulating film provided between said TFT and said blackmask.
 5. The device of claim 4 wherein said insulating film comprisessilicon oxide.
 6. The device of claim 1 wherein said black maskcomprises a material selected from the group consisting of polyimide,polyamide, polyimide amide and acryl as said resin.
 7. The device ofclaim 1 wherein said black mask comprises a carbon-based material or apigment dispersed in said resin.
 8. The device of claim 1 wherein saidblack mask comprises graphite dispersed in said resin.
 9. The device ofclaim 1 wherein said black mask comprises a black pigment dispersed insaid resin.
 10. The device of claim 1 wherein said TFT comprises a gateelectrode comprising a material selected from the group consisting ofaluminum, tantalum, molybdenum and tungsten.
 11. The device of claim 1wherein said black mask comprises a lamination structure of materialsselected from the group consisting of silicon oxide, silicon nitride,silicon nitride oxide and organic resin.
 12. The device of claim 1wherein said device is a direct view type display device, and said pixelelectrode has a rough surface.
 13. The device of claim 1 wherein saiddevice is a projection type display device, and said pixel electrode hasa mirror state surface.
 14. A reflection type display devicecomprising:an active matrix substrate; a TFT provided over a displaypart of said active matrix substrate; a pixel electrode provided oversaid active matrix substrate; an opposite substrate including anopposite electrode; an electro-optical modulating layer held between theactive matrix substrate and the opposite substrate; and a black maskcomprising a resin provided between said TFT and said electro-opticalmodulating layer, wherein said black mask covers at least an entiresurface of said display part of said active matrix substrate whileincluding a contact hole in said black mask to connect said pixelelectrode with said TFT through a reflective conductor provided in saidcontact hole.
 15. The device of claim 14 wherein said electro-opticalmodulating layer comprises a liquid crystal.
 16. The device of claim 14wherein said pixel electrode is provided on and in contact with saidblack mask.
 17. The device of claim 14 further comprising an insulatingfilm provided between said TFT and said black mask.
 18. The device ofclaim 17 wherein said insulating film comprises silicon oxide.
 19. Thedevice of claim 14 wherein said black mask comprises a material selectedfrom the group consisting of polyimide, polyamide, polyimide amide andacryl as said resin.
 20. The device of claim 14 wherein said black maskcomprises a carbon-based material or a pigment dispersed in said resin.21. The device of claim 14 wherein said black mask comprises graphitedispersed in said resin.
 22. The device of claim 14 wherein said blackmask comprises a black pigment dispersed in said resin.
 23. The deviceof claim 14 wherein said TFT comprises a gate electrode comprising amaterial selected from the group consisting of aluminum, tantalum,molybdenum and tungsten.
 24. The device of claim 14 wherein said blackmask comprises a lamination structure of materials selected from thegroup consisting of silicon oxide, silicon nitride, silicon nitrideoxide and organic resin.
 25. The device of claim 14 wherein said deviceis a direct view type display device, and said pixel electrode has arough surface.
 26. The device of claim 14 wherein said device is aprojection type display device, and said pixel electrode has a mirrorstate surface.
 27. An electronic device comprising a reflection typedisplay device, said electronic device comprising:an active matrixsubstrate; a TFT provided over a display part of said active matrixsubstrate; a pixel electrode provided over said active matrix substrate;an opposite substrate including an opposite electrode; anelectro-optical modulating layer held between the active matrixsubstrate and the opposite substrate; and a black mask comprising aresin provided between said TFT and said electro-optical modulatinglayer, wherein said black mask covers at least an entire surface of saiddisplay part of said active matrix substrate while including a contacthole in said black mask to connect said pixel electrode with said TFTthrough said contact hole.
 28. The device of claim 27 wherein saidelectro-optical modulating layer comprises a liquid crystal.
 29. Thedevice of claim 27 wherein said pixel electrode is provided on and incontact with said black mask.
 30. The device of claim 27 furthercomprising an insulating film provided between said TFT and said blackmask.
 31. The device of claim 30 wherein said insulating film comprisessilicon oxide.
 32. The device of claim 27 wherein said black maskcomprises a material selected from the group consisting of polyimide,polyamide, polyimide amide and acryl as said resin.
 33. The device ofclaim 27 wherein said black mask comprises a carbon-based material or apigment dispersed in said resin.
 34. The device of claim 27 wherein saidblack mask comprises graphite dispersed in said resin.
 35. The device ofclaim 27 wherein said black mask comprises a black pigment dispersed insaid resin.
 36. The device of claim 27 wherein said TFT comprises a gateelectrode comprising a material selected from the group consisting ofaluminum, tantalum, molybdenum and tungsten.
 37. The device of claim 27wherein said black mask comprises a lamination structure of materialsselected from the group consisting of silicon oxide, silicon nitride,silicon nitride oxide and organic resin.
 38. The device of claim 27wherein said device is a direct view type display device, and said pixelelectrode has a rough surface.
 39. The device of claim 27 wherein saiddevice is a projection type display device, and said pixel electrode hasa mirror state surface.
 40. The device of claim 27 wherein saidelectronic device is a video camera, a still camera, a projector, a headmount display, a car navigation system, a personal computer, a portableinformation terminal or a personal handy phone system.
 41. An electronicdevice comprising a reflection type display device, said electronicdevice comprising:an active matrix substrate; a TFT provided over adisplay part of said active matrix substrate; a pixel electrode providedover said active matrix substrate; an opposite substrate including anopposite electrode; an electro-optical modulating layer held between theactive matrix substrate and the opposite substrate; and a black maskcomprising a resin provided between said TFT and said electro-opticalmodulating layer, wherein said black mask covers at least an entiresurface of said display part of said active matrix substrate whileincluding a contact hole in said black mask to connect said pixelelectrode with said TFT through a reflective conductor provided in saidcontact hole.
 42. The device of claim 41 wherein said electro-opticalmodulating layer comprises a liquid crystal.
 43. The device of claim 41wherein said pixel electrode is provided on and in contact with saidblack mask.
 44. The device of claim 41 further comprising an insulatingfilm provided between said TFT and said black mask.
 45. The device ofclaim 44 wherein said insulating film comprises silicon oxide.
 46. Thedevice of claim 41 wherein said black mask comprises a material selectedfrom the group consisting of polyimide, polyamide, polyimide amide andacryl as said resin.
 47. The device of claim 41 wherein said black maskcomprises a carbon-based material or a pigment dispersed in said resin.48. The device of claim 41 wherein said black mask comprises graphitedispersed in said resin.
 49. The device of claim 41 wherein said blackmask comprises a black pigment dispersed in said resin.
 50. The deviceof claim 41 wherein said TFT comprises a gate electrode comprising amaterial selected from the group consisting of aluminum, tantalum,molybdenum and tungsten.
 51. The device of claim 41 wherein said blackmask comprises a lamination structure of materials selected from thegroup consisting of silicon oxide, silicon nitride, silicon nitrideoxide and organic resin.
 52. The device of claim 41 wherein said deviceis a direct view type display device, and said pixel electrode has arough surface.
 53. The device of claim 41 wherein said device is aprojection type display device, and said pixel electrode has a mirrorstate surface.
 54. The device of claim 41 wherein said electronic deviceis a video camera, a still camera, a projector, a head mount display, acar navigation system, a personal computer, a portable informationterminal or a personal handy phone system.
 55. A reflection type displaydevice comprising:an active matrix substrate; a TFT provided over adisplay part of said active matrix substrate; a pixel electrodecomprising a reflective conductor provided over said active matrixsubstrate; an opposite substrate including an opposite electrode; anelectro-optical modulating layer held between the active matrixsubstrate and the opposite substrate; and a black mask comprising aresin provided between said TFT and said electro-optical modulatinglayer, wherein said black mask covers at least an entire surface of saiddisplay part of said active matrix substrate while including a contacthole in said black mask to connect said pixel electrode with said TFTthrough said contact hole.
 56. The device of claim 55 wherein saidelectro-optical modulating layer comprises a liquid crystal.
 57. Thedevice of claim 55 wherein said pixel electrode is provided on and incontact with said black mask.
 58. The device of claim 55 furthercomprising an insulating film provided between said TFT and said blackmask.
 59. The device of claim 58 wherein said insulating film comprisessilicon oxide.
 60. The device of claim 55 wherein said black maskcomprises a material selected from the group consisting of polyimide,polyamide, polyimide amide and acryl as said resin.
 61. The device ofclaim 55 wherein said black mask comprises a carbon-based material or apigment dispersed in said resin.
 62. The device of claim 55 wherein saidblack mask comprises graphite dispersed in said resin.
 63. The device ofclaim 55 wherein said black mask comprises a black pigment dispersed insaid resin.
 64. The device of claim 55 wherein said TFT comprises a gateelectrode comprising a material selected from the group consisting ofaluminum, tantalum, molybdenum and tungsten.
 65. The device of claim 55wherein said black mask comprises a lamination structure of materialsselected from the group consisting of silicon oxide, silicon nitride,silicon nitride oxide and organic resin.
 66. The device of claim 55wherein said device is a direct view type display device, and said pixelelectrode has a rough surface.
 67. The device of claim 55 wherein saiddevice is a projection type display device, and said pixel electrode hasa mirror state surface.
 68. A reflection type display devicecomprising:an active matrix substrate; a TFT provided over a displaypart of said active matrix substrate; a reflective conductor providedover said active matrix substrate, a part of said reflective conductorserving as a pixel electrode; an opposite substrate including anopposite electrode; an electro-optical modulating layer held between theactive matrix substrate and the opposite substrate; and a black maskcomprising a resin provided between said TFT and said electro-opticalmodulating layer, wherein said black mask covers at least an entiresurface of said display part of said active matrix substrate while saidreflective conductor extends in a contact hole provided in said blackmask to connect said pixel electrode with said TFT through saidreflective conductor extending in said contact hole.
 69. The device ofclaim 68 wherein said electro-optical modulating layer comprises aliquid crystal.
 70. The device of claim 68 wherein said pixel electrodeis provided on and in contact with said black mask.
 71. The device ofclaim 68 further comprising an insulating film provided between said TFTand said black mask.
 72. The device of claim 71 wherein said insulatingfilm comprises silicon oxide.
 73. The device of claim 68 wherein saidblack mask comprises a material selected from the group consisting ofpolyimide, polyamide, polyimide amide and acryl as said resin.
 74. Thedevice of claim 68 wherein said black mask comprises a carbon-basedmaterial or a pigment dispersed in said resin.
 75. The device of claim68 wherein said black mask comprises graphite dispersed in said resin.76. The device of claim 68 wherein said black mask comprises a blackpigment dispersed in said resin.
 77. The device of claim 68 wherein saidTFT comprises a gate electrode comprising a material selected from thegroup consisting of aluminum, tantalum, molybdenum and tungsten.
 78. Thedevice of claim 68 wherein said black mask comprises a laminationstructure of materials selected from the group consisting of siliconoxide, silicon nitride, silicon nitride oxide and organic resin.
 79. Thedevice of claim 68 wherein said device is a direct view type displaydevice, and said pixel electrode has a rough surface.
 80. The device ofclaim 68 wherein said device is a projection type display device, andsaid pixel electrode has a mirror state surface.
 81. The device of claim68 wherein said pixel electrode comprises aluminum.
 82. An electronicdevice comprising a reflection type display device, said electronicdevice comprising:an active matrix substrate; a TFT provided over adisplay part of said active matrix substate; a pixel electrodecomprising a reflective conductor provided over said active matrixsubstrate; an opposite substrate including an opposite electrode; anelectro-optical modulating layer held between the active matrixsubstrate and the opposite substrate; and a black mask comprising aresin provided between said TFT and said electro-optical modulatinglayer, wherein said black mask covers at least an entire surface of saiddisplay part of said active matrix substrate while including a contacthole in said black mask to connect said pixel electrode with said TFTthrough said contact hole..
 83. The device of claim 82 wherein saidelectro-optical modulating layer comprises a liquid crystal.
 84. Thedevice of claim 82 wherein said pixel electrode is provided on and incontact with said black mask.
 85. The device of claim 82 furthercomprising an insulating film provided between said TFT and said blackmask.
 86. The device of claim 85 wherein said insulating film comprisessilicon oxide.
 87. The device of claim 82 wherein said black maskcomprises a material selected from the group consisting of polyimide,polyamide, polyimide amide and acryl as said resin.
 88. The device ofclaim 82 wherein said black mask comprises a carbon-based material or apigment dispersed in said resin.
 89. The device of claim 82 wherein saidblack mask comprises graphite dispersed in said resin.
 90. The device ofclaim 82 wherein said black mask comprises a black pigment dispersed insaid resin.
 91. The device of claim 82 wherein said TFT comprises a gateelectrode comprising a material selected from the group consisting ofaluminum, tantalum, molybdenum and tungsten.
 92. The device of claim 82wherein said black mask comprises a lamination structure of materialsselected from the group consisting of silicon oxide, silicon nitride,silicon nitride oxide and organic resin.
 93. The device of claim 82wherein said device is a direct view type display device, and said pixelelectrode has a rough surface.
 94. The device of claim 82 wherein saiddevice is a projection type display device, and said pixel electrode hasa mirror state surface.
 95. The device of claim 82 wherein said pixelelectrode comprises aluminum.
 96. The device of claim 82 wherein saidelectronic device is a video camera, a still camera, a projector, a headmount display, a car navigation system, a personal computer, a portableinformation terminal or a personal handy phone system.
 97. An electronicdevice comprising a reflection type display device, said electronicdevice comprising:an active matrix substate; a TFT provide over adisplay part of said active matrix substrate; a reflective conductorprovided over said active matrix substrate, a part of said reflectiveconductor serving as a pixel electrode; an opposite substrate includingan opposite electrode; an electro-optical modulating layer held betweenthe active matrix substrate and the opposite substrate; and a black maskcomprising a resin provided between said TFT and said electro-opticalmodulating layer, wherein said black mask covers at least an entiresurface of said display part of said active matrix substrate while saidreflective conductor extends in a contact hole provided in aid blackmask to connect said pixel electrode with said TFT through saidreflective conductor extending in said contact hole.
 98. The device ofclaim 97 wherein said electro-optical modulating layer comprises aliquid crystal.
 99. The device of claim 97 wherein said pixel electrodeis provided on and in contact with said black mask.
 100. The device ofclaim 97 further comprising an insulating film provided between said TFTand said black mask.
 101. The device of claim 100 wherein saidinsulating film comprises silicon oxide.
 102. The device of claim 97wherein said black mask comprises a material selected from the groupconsisting of polyimide, polyamide, polyimide amide and acryl as saidresin.
 103. The device of claim 97 wherein said black mask comprises acarbon-based material or a pigment dispersed in said resin.
 104. Thedevice of claim 97 wherein said black mask comprises a graphitedispersed in said resin.
 105. The device of claim 97 wherein said blackmask comprises, a black pigment dispersed in said resin.
 106. The deviceof claim 97 wherein said TFT comprises a gate electrode comprising amaterial selected from the group consisting of aluminum, tantalum,molybdenum and tungsten.
 107. The device of claim 97 wherein said blackmask comprises a lamination structure of materials selected from thegroup consisting of silicon oxide, silicon nitride, silicon nitrideoxide and organic resin.
 108. The device of claim 97 wherein said deviceis a direct view type display device, and said pixel electrode has arough surface.
 109. The device of claim 97 wherein said device is aprojection type display device, and said pixel electrode has a mirrorstate surface.
 110. The device of claim 97 wherein said pixel electrodecomprises aluminum.
 111. The device of claim 97 wherein said electronicdevice is a video camera, a still camera, a projector, a head mountdisplay, a car navigation system, a personal computer, a portableinformation terminal or a personal handy phone system.